MTD2N50E Datasheet, PDF (6/10 Pages) Motorola, Inc – TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

MTD2N50E
SAFE OPERATING AREA
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1.0
10 µs
100 µs
1 ms
0.1
10 ms
0.01
0.1
RDS(on) LIMIT
dc
THERMAL LIMIT
PACKAGE LIMIT
1.0
10
100
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100
ID = 2 A
80
60
40
20
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.0
D = 0.5
0.2
0.1
0.1
0.01
1.0E–05
0.05
0.02
0.01
SINGLE PULSE
1.0E–04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
R_θJC(t) = r(t) R_θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R_θJC(t)
1.0E–03
1.0E–02
t, TIME (s)
1.0E–01
Figure 13. Thermal Response
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 14. Diode Reverse Recovery Waveform
6
Motorola TMOS Power MOSFET Transistor Device Data