MTD2N50E Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

TYPICAL ELECTRICAL CHARACTERISTICS
MTD2N50E
4
TJ = 25°C
VGS = 10 V
6V
3
2
5V
1
0
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
4.0
VDS ≥ 10 V
3.5
3.0
2.5
TJ = –55°C
25°C
100°C
2.0
1.5
1.0
0.5
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
8
VGS = 10 V
7
6
TJ = 100°C
5
4
25°C
3
2
– 55°C
1
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
4.2
TJ = 25°C
3.8
3.4
VGS = 10 V
3.0
15 V
2.6
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 1 A
1.6
1.2
0.8
1000
VGS = 0 V
100
10
TJ = 125°C
100°C
25°C
0.4
–50 –25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On–Resistance Variation with
Temperature
1
0 50 100 150 200 250 300 350 400 450 500
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3