MRF5S9070NR1 Datasheet, PDF (6/12 Pages) Motorola, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
20
45
19
G_ps
40
18
35
17
η_D
30
16
V_DD = 26 Vdc, P_out = 14 W (Avg.), I_DQ = 600 mA 25
15
Single −Carrier N−CDMA, IS−95
14
IRL ^{(Pilot, Sync, Paging, Traffic Codes 8 through 13) −40}
− 12
13
12
ACPR
11
10
ALT
− 45
− 15
− 50
− 18
− 55
− 21
− 60
− 24
9
− 65
− 27
8
− 70
− 30
860 865 870 875 880 885 890 895 900
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Performance
20
19 ^{IDQ = 900 mA}
750 mA
600 mA
18
450 mA
17
300 mA
16
15
1
V_DD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements
100 kHz Tone Spacing
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
− 20
V_DD = 26 Vdc
−25 _{f1 = 880 MHz, f2 = 880.1 MHz}
Two −Tone Measurements
−30 _{100 kHz Tone Spacing}
− 35
−40 ^{300 mA}
− 45
− 50
I_DQ = 900 mA
750 mA
600 mA
− 55
450 mA
− 60
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
20
60
G_ps
18
40
16
20
η_D
14
0
V_DD = 26 Vdc, I_DQ = 600 mA
12
f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements,
− 20
100 kHz Tone Spacing
10
IMD
− 40
8
1
− 60
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Drain Efficiency and
IMD versus Output Power
− 10
V_DD = 26 Vdc, I_DQ = 600 mA
−20 f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements
−30 _{Center Frequency = 880 MHz}
100 kHz Tone Spacing
− 40
3rd Order
− 50
− 60
5th Order
− 70
7th Order
− 80
− 90
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
MRF5S9070NR1 MRF5S9070MR1
6
RF Device Data
Freescale Semiconductor