MRF5S9070NR1 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V_DD = 26 Volts,
I_DQ = 600 mA, P_out = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13)
Power Gain — 17.8 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — - 47 dBc @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MRF5S9070NR1
Rev. 3, 12/2004
MRF5S9070NR1
MRF5S9070MR1
880 MHz, 70 W, 26 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1265- 08, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
P_D
- 0.5, + 68
- 0.5, + 15
219
1.25
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
T_stg
T_J
Symbol
- 65 to +150
200
Value ⁽¹⁾
Thermal Resistance, Junction to Case
Case Temperature 80°C, 70 W CW
Case Temperature 78°C, 14 W CW
R_θJC
0.80
0.93
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114 - B)
Class
2 (Minimum)
Machine Model (per EIA/JESD22 - A115 - A)
A (Minimum)
Charge Device Model (per JESD22 - C101- A)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113D, IPC/JEDEC J - STD - 020C
3
260
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9070NR1 MRF5S9070MR1
1