MRF5S9070NR1 Datasheet, PDF (11/12 Pages) Motorola, Inc – RF Power Field Effect Transistors

B
aaa ^M D A
D
2X
aaa M D A b1
PACKAGE DIMENSIONS
E1
2X
2X
D3
E4
PIN ONE ID
D1
E
A
E5
PIN 2
D2
PIN3 ^{ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇEÇÇÇÇÇÇÇÇÇ3 ÇÇÇÇÇÇÇÇÇ}
EXPOSED
HEATSINK AREA
PIN 1
BOTTOM VIEW
c1
H
DATUM
PLANE
A1
A2
NOTE 7
F
ZONE J
2X
E2
E5
A
D
CASE 1265 - 08
ISSUE G
TO - 270- 2
PLASTIC
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .078 .082 1.98 2.08
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D .416 .424 10.57 10.77
D1 .378 .382 9.60 9.70
D2 .290 .320 7.37 8.13
D3 .016 .024 0.41 0.61
E .436 .444 11.07 11.28
E1 .238 .242 6.04 6.15
E2 .066 .074 1.68 1.88
E3 .150 .180 3.81 4.57
E4 .058 .066 1.47 1.68
E5 .231 .235 5.87 5.97
F
.025 BSC
0.64 BSC
b1 .193 .199 4.90 5.06
c1 .007 .011 0.18 0.28
aaa
.004
0.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
RF Device Data
Freescale Semiconductor
MRF5S9070NR1 MRF5S9070MR1
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