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MRF5S19150 Datasheet, PDF (6/12 Pages) Motorola, Inc – RF Power Field Effect Transistors | |||
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Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
45
40
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
35 2 x NâCDMA, 2.5 MHz @ 1.2288 MHz Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
30
25
â25
IM3
â30
â35
η
â40
â45
20
â50
ACPR
15
â55
10
Gps â60
5
â65
0
1
â70
10
Pout, OUTPUT POWER (WATTS) AVG., NâCDMA
Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power
Gain, Drain Efficiency versus Output Power
0
1.2288 MHz
â10
Channel BW
â20
âIM3 @
â30
1.2288 MHz
Integrated BW
â40
+IM3 @
1.2288 MHz
Integrated BW
â50
â60
â70
âACPR @ 30 kHz +ACPR @ 30 kHz
Integrated BW
Integrated BW
â80
â90
â100
â7.5 â6 â4.5 â3 â1.5 0
1.5 3
4.5 6 7.5
f, FREQUENCY (MHz)
Figure 9. 2 - Carrier N - CDMA Spectrum
109
108
107
106
100
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTBF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by ID2 for MTBF in a particular application.
Figure 10. MTBF Factor versus Junction Temperature
MRF5S19150R3 MRF5S19150SR3
MOTOROLA RF DEVICE DATA
6
For More Information On This Product,
Go to: www.freescale.com
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