MRF5S19150 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF Power Field Effect Transistors

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRF5S19150/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors ^MRF5S19150R3
N - Channel Enhancement - Mode Lateral MOSFETs _{MRF5S19150SR3}
Designed for PCN and PCS base station applications at frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for V_DD = 28 Volts,
P_out = 32 Watts, I_DQ = 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 32 Watts Avg.
Power Gain — 14 dB
Efficiency — 26%
ACPR — - 50 dB
IM3 — - 36.5 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
100 Watts CW Output Power
• Excellent Thermal Stability
• Qualified Up to a Maximum of 32 V Operation
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1990 MHz, 32 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19150R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19150SR3
MAXIMUM RATINGS
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 32 W CW
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
CW
Symbol
R_θJC
Value
65
- 0.5, +15
357
2
- 65 to +150
200
100
Value (1,2)
0.49
0.53
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
Unit
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
 M^Mo^Oto^Tro^Ola,^RIn^Oc.^L2^A00^R4 ^{F DEVICE DATA}
MRF5S19150R3 MRF5S19150SR3
For More Information On This Product,
Go to: www.freescale.com
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