MRF5S19150 Datasheet, PDF (2/12 Pages) Motorola, Inc – RF Power Field Effect Transistors

Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
I_DSS
—
—
1
I_GSS
—
—
1
ON CHARACTERISTICS
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 360 µAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1400 mAdc)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 3.6 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3.6 Adc)
V_GS(th)
2.5
2.8
3.5
V_GS(Q)
—
3.8
—
V_DS(on)
—
0.24
—
g_fs
—
9
—
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
C_rss
—
3.1
—
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
(V_DD = 28 Vdc, P_out = 32 W Avg, I_DQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
G_ps
13
14
—
Drain Efficiency
(V_DD = 28 Vdc, P_out = 32 W Avg, I_DQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
24
26
—
Third Order Intermodulation Distortion
IM3
(V_DD = 28 Vdc, P_out = 32 W Avg, I_DQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz
referenced to carrier channel power.)
—
- 36.5
- 35
Adjacent Channel Power Ratio
ACPR
—
(V_DD = 28 Vdc, P_out = 32 W Avg, I_DQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 - 885 MHz and f2 +885 MHz)
- 50
- 48
Input Return Loss
(V_DD = 28 Vdc, P_out = 32 W Avg, I_DQ = 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL
—
- 17
-9
(1) Part is internally matched both on input and output.
Unit
µAdc
µAdc
µAdc
Vdc
Vdc
Vdc
S
pF
dB
%
dBc
dBc
dB
MRF5S19150R3 MRF5S19150SR3
MOTOROLA RF DEVICE DATA
2
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