MRF5P20180 Datasheet, PDF (6/8 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTOR

Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
35
V_DD = 28 Vdc, I_DQ = 1600 mA
30 ^{f1 = 1955 MHz, f2 = 1965 MHz}
2 x W-CDMA
25 ^{10 MHz @ 3.84 MHz Channel Bandwidth}
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
20
15
10
-20
η
-25
-30
IM3
-35
ACPR
-40
G_ps
-45
5
-50
0
-55
1
10
100
P_out, OUTPUT POWER (WATTS, Avg.) W-CDMA
Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
-20
3.84 MHz
-30
Channel BW
-40
-50
-60
-70
-80
-90
-100 _{-IM3 @}
-ACPR @ +ACPR @
3.84 MHz BW 3.84 MHz BW
-110 ^{3.84 MHz BW}
-120
-25 -20 -15 -10 -5 0 5 10
f, FREQUENCY (MHz)
+IM3 @
3.84 MHz BW
15 20 25
Figure 9. 2-Carrier W-CDMA Spectrum
100
10
1
0.1
0.01
0.001
0.0001
0
2
4
6
8
10
PEAK-TO-AVERAGE (dB)
Figure 10. CCDF W–CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
10¹⁰
10⁹
10⁸
10⁷
100
120
140
160
180
200 220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTBF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by I_D2 for MTBF in a particular application.
Figure 11. MTBF Factor versus Junction Temperature
MRF5P20180R6
6
MOTOROLA RF DEVICE DATA
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