MRF5P20180 Datasheet, PDF (1/8 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTOR

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRF5P20180/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for W–CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
• Typical 2–carrier W–CDMA Performance for V_DD = 28 Volts,
I_DQ = 2 x 800 mA, f1 = 1955 MHz, f2 = 1965 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power — 38 Watts Avg.
Power Gain — 14 dB
Efficiency — 26%
IM3 — –37.5 dBc
ACPR — –41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V_DD Operation
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF5P20180R6
1990 MHz, 38 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 375D–04, STYLE 1
NI–1230
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 120 W CW
Case Temperature 80°C, 38 W CW
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
CW
Symbol
R_θJC
Value
65
–0.5, +15
407
2.3
–65 to +150
200
120
Max
0.43
0.43
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
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MRF5P20180R6
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