MRF5P20180 Datasheet, PDF (5/8 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTOR

Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
15
40
14 G_ps
13
η
12
11
10
IRL
9
V_DD = 28 Vdc, P_out = 38 W (Avg.), I_DQ = 1600 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
35
30
25
20
-20
-10
-25
-15
8
-30
-20
7
IM3
-35
-25
6
ACPR
5
-40
-30
-45
-35
1840 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
f, FREQUENCY (MHz)
Figure 3. 2–Carrier W–CDMA Broadband Performance
16
15.5 I_DQ = 2400 mA
15 2000 mA
14.5 1600 mA
14
1200 mA
13.5
13
12.5 ^{800 mA}
12
11.5
11
1
V_DD = 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two–Tone Power Gain versus
Output Power
-20
-25
-30 ^{3rd Order}
-35
-40 5th Order
-45
7th Order
-50
-55 ^VDD ^{= 28 Vdc, P}out ^{= 180 W (PEP), I}DQ ^{= 1600 mA}
Two-Tone Measurements, Center Frequency = 1960 MHz
-60
0.1
1
10
100
TWO-TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
-20
V_DD = 28 Vdc
-25 _{f1 = 1955 MHz, f2 = 1965 MHz}
Two-Tone Measurements, 10 MHz Tone Spacing
-30
I_DQ = 800 mA
-35
2400 mA
-40
-45
-50
2000 mA
-55
1600 mA
1200 mA
-60
1
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
58
57
Ideal
56
P3dB = 54 dBm (251 W)
55
54
P1dB = 53.5 dBm (224 W)
53
Actual
52
51
50
49
48
47
V_DD = 28 Vdc, I_DQ = 1600 mA
46
Pulsed CW, 5 µsec(on), 1 msec(off)
45
Center Frequency = 1960 MHz
44
30 32 34 36 38 40 42 44 46
P_in, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5P20180R6
5