MRF373R1 Datasheet, PDF (6/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TYPICAL CHARACTERISTICS FOR MRF373R1 IN SINGLE–ENDED FIXTURE
18
17
I_DQ = 500 mA
16
400 mA
300 mA
15
200 mA
100 mA
14
V_DD = 28 V
f = 860 MHz
13
30
35
40
45
50
P_out, OUTPUT POWER (dBm)
Figure 7. Power Gain versus Output Power
22
20 V_DD = 28 V
IRL
I_DQ = 200 mA
18 _{Pout = 60 W (CW)}
16
G_p
14
58
η
57
56
55
54
12
53
10
52
8
51
6
50
800
820
840
860
880
900 920
f, FREQUENCY (MHz)
Figure 8. Performance in Narrowband Circuit
120
100
80
C_iss
60
C_oss
40
20
C_rss
0
0
10
20
30
40
50
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 9. Capacitance versus Voltage
f
MHz
400
450
500
550
600
650
700
750
800
850
900
|S₁₁|
0.921
0.922
0.924
0.926
0.929
0.932
0.936
0.940
0.945
0.951
0.957
Table 1. Common Source S–Parameters (V_DS = 28 V, I_D = 2.0 A)
S₁₁
∠φ
182
181
180
179
178
177
176
176
175
174
173
S₂₁
|S₂₁|
∠φ
2.23
52
1.95
49
1.70
46
1.49
42
1.31
38
1.16
35
1.03
31
0.93
28
0.84
26
0.78
24
0.72
24
S₁₂
|S₁₂|
∠φ
0.009
39
0.009
53
0.010
64
0.011
72
0.013
78
0.015
81
0.017
82
0.019
82
0.021
82
0.023
80
0.025
78
S₂₂
|S₂₂|
∠φ
0.824
184
0.832
184
0.841
184
0.851
183
0.860
183
0.870
182
0.881
182
0.892
181
0.904
180
0.917
180
0.929
179
MRF373R1 MRF373SR1
6
MOTOROLA RF DEVICE DATA
Archived 2005