MRF373R1 Datasheet, PDF (2/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V_GS = 0 Vdc, I_D =1 µA)
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate–Source Leakage Current
(V_GS = 20 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
65
–
I_DSS
–
–
I_GSS
–
–
–
Vdc
1
µAdc
1
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V_DS = 10 V, I_D = 200 µA)
Gate Quiescent Voltage
(V_DS = 28 V, I_D = 100 mA)
Drain–Source On–Voltage
(V_GS = 10 V, I_D = 3 A)
Forward Transconductance
(V_DS = 10 V, I_D = 3 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V_DS = 28 V, V_GS = 0, f = 1 MHz)
Output Capacitance
(V_DS = 28 V, V_GS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(V_DS = 28 V, V_GS = 0, f = 1 MHz)
V_GS(th)
2
3
4
Vdc
V_GS(Q)
3
4
5
Vdc
V_DS(on)
–
0.6
0.8
Vdc
g_fs
2.2
2.9
–
S
C_iss
–
79
–
pF
C_oss
–
46
–
pF
C_rss
–
4
–
pF
FUNCTIONAL CHARACTERISTICS, CW Operation
Common Source Power Gain
(V_DD = 28 V, P_out = 60 W, I_DQ = 200 mA, f = 860 MHz)
Drain Efficiency
(V_DD = 28 V, P_out = 60 W, I_DQ = 200 mA, f = 860 MHz)
Load Mismatch
(V_DD = 28 V, P_out = 60 W, I_DQ = 200 mA, f = 860 MHz,
Load VSWR at 5:1 at All Phase Angles)
G_ps
13
14.7
η
50
54
–
dB
–
%
ψ
No Degradation in Output Power
TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373SR1), Broadband Fixture
Common Source Power Gain
(V_DD = 28 Vdc, P_out = 100 W PEP, I_DQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
G_ps
–
11.2
–
dB
Drain Efficiency
(V_DD = 28 Vdc, P_out = 100 W PEP, I_DQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
η
–
40
–
%
Third Order Intermodulation Distortion
(V_DD = 28 Vdc, P_out = 100 W PEP, I_DQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
IMD
–
–30
–
dBc
MRF373R1 MRF373SR1
2
MOTOROLA RF DEVICE DATA
Archived 2005