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MRF373R1 Datasheet, PDF (2/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS | |||
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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainâSource Breakdown Voltage
(VGS = 0 Vdc, ID =1 µA)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
GateâSource Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
V(BR)DSS
65
â
IDSS
â
â
IGSS
â
â
â
Vdc
1
µAdc
1
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 200 µA)
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
DrainâSource OnâVoltage
(VGS = 10 V, ID = 3 A)
Forward Transconductance
(VDS = 10 V, ID = 3 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
VGS(th)
2
3
4
Vdc
VGS(Q)
3
4
5
Vdc
VDS(on)
â
0.6
0.8
Vdc
gfs
2.2
2.9
â
S
Ciss
â
79
â
pF
Coss
â
46
â
pF
Crss
â
4
â
pF
FUNCTIONAL CHARACTERISTICS, CW Operation
Common Source Power Gain
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz)
Drain Efficiency
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz)
Load Mismatch
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz,
Load VSWR at 5:1 at All Phase Angles)
Gps
13
14.7
η
50
54
â
dB
â
%
Ï
No Degradation in Output Power
TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373SR1), Broadband Fixture
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
Gps
â
11.2
â
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
η
â
40
â
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
IMD
â
â30
â
dBc
MRF373R1 MRF373SR1
2
MOTOROLA RF DEVICE DATA
Archived 2005
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