MRF373R1 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF373/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 – 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28 volt transmitter equipment.
• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
Output Power – 60 Watts
Power Gain – 13 dB
Efficiency – 50%
• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
Output Power – 100 Watts (PEP)
Power Gain – 11.2 dB
Efficiency – 40%
IMD – –30 dBc
D
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at All
Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,
60 Watts CW
• In Tape and Reel. R1 = 500 units per 32 mm,
13 inch Reel.
G
S
MRF373R1
MRF373SR1
470 – 860 MHz, 60 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETS
CASE 360B–05, STYLE 1
NI–360
MRF373R1
CASE 360C–05, STYLE 1
NI–360S
MRF373SR1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
MRF373SR1
Symbol
V_DSS
V_GS
I_D
P_D
T_stg
T_J
MRF373SR1
MRF373R1
Symbol
R_θJC
R_θJC
Value
65
±20
7
173
1.33
– 65 to +150
200
Max
0.75
1
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Unit
°C/W
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
 M^Mo^Oto^Tro^Ola,^RIn^Oc.^L2^A00^R2 ^{F DEVICE DATA}
MRF373R1 MRF373SR1
1
Archived 2005