MRF19125 Datasheet, PDF (6/12 Pages) Motorola, Inc – RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
30
-28
V_DD = 26 Vdc, I_DQ = 1300 mA
25 ^{f1 = 1958.75 MHz, f2 = 1961.25 MHz}
-35
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
20
-42
15
G _ps
-49
10
IM3
-56
η
5
ACPR
-63
0
-70
1
10
40
P_out, OUTPUT POWER (WATTS Avg.) NĆCDMA
Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
-20
41
V_DD = 26 Vdc
-30 ^IDQ ^{= 1300 mA}
35
f = 1960 MHz
100 kHz Tone Spacing
-40
29
-50
-60
-70
-80
4
3rd Order
5th Order
7th Order
η
10
23
17
11
5
100 150
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion
Products versus Output Power
-20
V_DD = 26 Vdc
-25 ^{f = 1960 MHz}
100 kHz Tone Spacing
-30
-35
I_DQ = 900 mA
-40
-45 1700 mA
1100 mA
-50 ^{1500 mA}
-55
4
1300 mA
10
100 150
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
24
0
η
22
-10
IRL
20
-20
2ĆCarrier NĆCDMA, 2.5 MHz Carrier Spacing
18
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
-30
16 ^IM3
14 ^ACPR
V_DD = 26 Vdc
-40
P_out = 24 Watts (Avg.)
I_DQ = 1300 mA
-50
G _ps
12
-60
1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 6. 2-Carrier N-CDMA Broadband
Performance
14
56
G _ps
12
48
V_DD = 26 Vdc
10 I_DQ = 1300 mA
40
f = 1960 MHz
8
32
6
24
η
4
16
2
P _in
0
2
10
8
0
100 200
P_out, OUTPUT POWER (WATTS)
Figure 7. CW Performance
38
37
η
36
IMD
35
-27
I_DQ = 1300 mA
f = 1960 MHz
-28
100 kHz Tone Spacing
-29
-30
34
-31
33
-32
32
-33
24 24.5 25 25.5 26 26.5 27 27.5 28
V_DD, DRAIN SUPPLY (V)
Figure 8. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
MRF19125 MRF19125S MRF19125SR3
6
MOTOROLA RF DEVICE DATA