MRF19125 Datasheet, PDF (2/12 Pages) Motorola, Inc – RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 µAdc)
V_(BR)DSS
65
—
—
Vdc
Gate–Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
µAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
µAdc
ON CHARACTERISTICS
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3 Adc)
g_fs
—
9
—
S
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 µAdc)
V_GS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 1300 mAdc)
V_GS(Q)
2.5
3.9
4.5
Vdc
Drain–Source On–Voltage
(V_GS = 10 Vdc, I_D = 3 Adc)
V_DS(on)
—
0.185
0.21
Vdc
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V_DS = 26 Vdc, V_GS = 0, f = 1 MHz)
C_rss
—
5.4
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture) 2–Carrier N–CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB
@ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(V_DD = 26 Vdc, P_out = 24 W Avg, I_DQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
G_ps
12
13.5
—
dB
Drain Efficiency
(V_DD = 26 Vdc, P_out = 24 W Avg, I_DQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
19
22
—
%
Intermodulation Distortion
IMD
—
–37
–35
dBc
(V_DD = 26 Vdc, P_out = 24 W Avg, I_DQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 –2.5 MHz and f2 +2.5 MHz)
Adjacent Channel Power Ratio
ACPR
—
(V_DD = 26 Vdc, P_out = 24 W Avg, I_DQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 –885 MHz and f2 +885 MHz)
–51
–47
dBc
Input Return Loss
(V_DD = 26 Vdc, P_out = 24 W Avg, I_DQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL
—
–13
–9
dB
Output Mismatch Stress
Ψ
(V_DD = 26 Vdc, P_out = 125 W CW, I_DQ = 1300 mA, f = 1930 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Test)
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF19125 MRF19125S MRF19125SR3
2
MOTOROLA RF DEVICE DATA