MRF19125 Datasheet, PDF (3/12 Pages) Motorola, Inc – RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

ELECTRICAL CHARACTERISTICS — continued (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture)
Two–Tone Common–Source Amplifier Power Gain
G_ps
—
13.5
—
dB
(V_DD = 26 Vdc, P_out = 125 W PEP, I_DQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
Two–Tone Drain Efficiency
η
(V_DD = 26 Vdc, P_out = 125 W PEP, I_DQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
—
35
—
%
Third Order Intermodulation Distortion
IMD
—
–30
—
dBc
(V_DD = 26 Vdc, P_out = 125 W PEP, I_DQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
Input Return Loss
IRL
—
–13
—
dB
(V_DD = 26 Vdc, P_out = 125 W PEP, I_DQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
P_out, 1 dB Compression Point
(V_DD = 26 Vdc, I_DQ = 1300 mA, f = 1990 MHz)
P1dB
—
130
—
W
MOTOROLA RF DEVICE DATA
MRF19125 MRF19125S MRF19125SR3
3