MRF176GU Datasheet, PDF (5/10 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

TYPICAL CHARACTERISTICS
500
30
200
Ciss
25
100
Coss
20
Pout = 200 W
50
VGS = 0 V
f = 1 MHz
15
150 W
20
VDS = 50 V
10
Crss
10
IDQ = 2 x 100 mA
5
0
10
20
30
40
50
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Drain–Source Voltage*
* Data shown applies to each half of MRF176GU/GV
5
5
10
20
50
100
200
500
f, FREQUENCY (MHz)
Figure 7. Power Gain versus Frequency
MRF176GV
300
VDD = 50 V
200
40 V
100
IDQ = 2 x 100 mA
f = 225 MHz
0
0
6
12
Pin, POWER INPUT (WATTS)
Figure 8. Power Input versus Power Output
320
280 ^{IDQ = 2 x 100 mA}
f = 225 MHz
240
200
160
Pin = 6 W
4W
120
2W
80
40
0
30 32 34 36 38 40 42 44 46 48 50
VDS, SUPPLY VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF176GU MRF176GV
5