MRF176GU Datasheet, PDF (1/10 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF176GU/D
The RF MOSFET Line
RF Power
Field-Effect Transistors
N–Channel Enhancement–Mode
MRF176GU
MRF176GV
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
• Electrical Performance
MRF176GU @ 50 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 14 dB Typ
Efficiency — 50% Typ
MRF176GV @ 50 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 17 dB Typ
Efficiency — 55% Typ
D
• 100% Ruggedness Tested At Rated Output Power
• Low Thermal Resistance
G
• Low Crss — 7.0 pF Typ @ VDS = 50 V
G
S
(FLANGE)
200/150 W, 50 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
MAXIMUM RATINGS
CASE 375–04, STYLE 2
D
Rating
Symbol
Value
Unit
Drain–Source Voltage
Gate–Source Voltage
VDSS
125
Vdc
VGS
± 40
Vdc
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
ID
16
Adc
PD
400
Watts
2.27
W/°C
Storage Temperature Range
Operating Junction Temperature
Tstg
– 65 to +150
°C
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R_θJC
0.44
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 mA)
V(BR)DSS
125
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
IDSS
—
—
2.5
mAdc
Gate–Body Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
—
—
1.0
µAdc
NOTE:
1. Each side of device measured separately.
REV 8
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF176GU MRF176GV
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