MRF176GU Datasheet, PDF (4/10 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

TYPICAL CHARACTERISTICS
4000
100
VDS = 30 V
3000
15 V
2000
10
1000
0
1
0 1 2 3 4 5 6 7 8 9 10
2
ID, DRAIN CURRENT (AMPS)
Figure 3. Common Source Unity Current Gain*
Gain–Frequency versus Drain Current
* Data shown applies to each half of MRF176GU/GV
TC = 25°C
10
50
200
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
INPUT AND OUTPUT IMPEDANCE
MRF176GU/GV
VDD = 50 V, IDQ = 2 x 100 mA
150
100
Zin
300
400
225
f = 500 MHz
f = 500 MHz
400
ZOL*
225 ³⁰⁰
225
50
30
Zo = 10 Ω
150 _ZOL*
100
50
30
f
Zin
MHz
OHMS
ZOL*
OHMS
(Pout = 150 W)
225 2.05 – j2.50 6.50 – j3.50
300 2.00 – j1.10 4.80 – j3.10
400 1.85 + j0.75 3.00 – j1.90
500 1.60 + j2.70 2.60 + j0.10
(Pout = 200 W)
30 7.50 – j6.50 17.00 – j4.00
50 5.50 – j7.00 14.00 – j5.00
100 3.20 – j6.00 11.00 – j5.20
150 2.50 – j4.80 8.20 – j5.00
225 2.05 – j2.50 5.00 – j4.20
ZOL* = Conjugate of the optimum load
impedance into which the device output
operates at a given output power, voltage
and frequency.
NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively.
Figure 5. Series Equivalent Input/Output Impedance
MRF176GU MRF176GV
4
MOTOROLA RF DEVICE DATA