MRF175GU Datasheet, PDF (5/8 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

TYPICAL CHARACTERISTICS
MRF175GV
300
320
280
240
IDQ = 2 x 100 mA
f = 225 MHz
Pin = 12 W
200
200
160
8W
100
VDD = 28 V
IDQ = 2 x 100 mA
f = 225 MHz
0
0
12
24
Pin, POWER INPUT (WATTS)
Figure 8. Power Input versus Power Output
120
4W
80
40
0
12 14 16
18 20
22 24 26 28
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
MRF175GU
200
200
180
Pin = 14 W
180
160
160
140
140
10 W
120
120
100
100
6W
80
80
60
60
40
40
20
f = 400 MHz
20
0
0
12 14 16 18 20 22 24 26 28
0
VDD, SUPPLY VOLTAGE (VOLTS)
f = 400 MHz
500 MHz
VDS = 28 V
IDQ = 2 x 100 mA
5
10
15
20
25
Pin, INPUT POWER (WATTS)
Figure 10. Output Power versus Supply Voltage
Figure 11. Output Power versus Input Power
MRF175GV
30
25
Pout = 200 W
20
15
VDS = 28 V
10
IDQ = 2 x 100 mA
150 W
5
5
10
20
50
100
200
500
f, FREQUENCY (MHz)
Figure 12. Power Gain versus Frequency
MOTOROLA RF DEVICE DATA
MRF175GU MRF175GV
5