MRF175GU Datasheet, PDF (3/8 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
FUNCTIONAL CHARACTERISTICS — MRF175GU (1) (Figure 2)
Common Source Power Gain
Gps
(VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA)
Drain Efficiency
η
(VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA)
Electrical Ruggedness
ψ
(VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
NOTE:
1. Measured in push–pull configuration.
Min
Typ
Max
Unit
10
12
—
dB
50
55
—
%
No Degradation in Output Power
A
B
C14 L5 C15
L6
BIAS
C10
C11
R1
C12
R2 ^C13
C18
28 V
C1
L1
D.U.T.
Z1
L3
Z3
C8
Z5
B1
C3
C4
C5
C6
C7
B2
C2
L2
Z2
R3
A
C16
Z4
L4
B
C17
Z6
C9
0.180″
B1 — Balun 50 Ω Semi Rigid Coax 0.086″ O.D. 2″ Long
B2 — Balun 50 Ω Semi Rigid Coax 0.141″ O.D. 2″ Long
C1, C2, C8, C9 — 270 pF ATC Chip Cap
C3, C5, C7 — 1.0 – 20 pF Trimmer Cap
C4 — 15 pF ATC Chip Cap
C6 — 33 pF ATC Chip Cap
C10, C12, C13, C16, C17 — 0.01 µF Ceramic Cap
C11 — 1.0 µF 50 V Tantalum
C14, C15 — 680 pF Feedthru Cap
C18 — 20 µF 50 V Tantalum
L1, L2 — Hairpin Inductor #18 Wire
L3, L4 — 12 Turns #18 Enameled Wire 0.340″ I.D.
L5 — Ferroxcube VK200 20/4B
L6 — 3 Turns #16 Enameled Wire 0.340″ I.D.
R1 — 1.0 kΩ 1/4 W Resistor
R2, R3 — 10 kΩ 1/4 W Resistor
Z1, Z2 — Microstrip Line 0.400″ x 0.250″
Z3, Z4 — Microstrip Line 0.870″ x 0.250″
Z5, Z6 — Microstrip Line 0.500″ x 0.250″
Board material — 0.060″ Teflon–fiberglass,
ε_r = 2.55, copper clad both sides, 2 oz. copper.
Figure 2. 400 MHz Test Circuit
0.200″
MOTOROLA RF DEVICE DATA
MRF175GU MRF175GV
3