MRF175GU Datasheet, PDF (4/8 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

TYPICAL CHARACTERISTICS
4000
100
3000
VDS = 20 V
2000
VDS = 10 V
10
1000
0
1
0 2 4 6 8 10 12 14 16 18 20
1
ID, DRAIN CURRENT (AMPS)
Figure 3. Common Source Unity Current Gain
Frequency versus Drain Current
TC = 25°C
10
100
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
5
4
VDS = 10 V
3
2
TYPICAL DEVICE SHOWN, VGS(th) = 3 V
1
1
2
3
4
5
6
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 5. Drain Current versus Gate Voltage
(Transfer Characteristics)
1.2
VDD = 28 V
1.1
1
ID = 4 A
3A
2A
0.9
100 mA
0.8
– 25 0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 6. Gate–Source Voltage versus
Case Temperature
1000
VGS = 0 V
500
f = 1 MHz
Coss
200
Ciss
100
50
Crss
20
10
0
5
10
15
20
25
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance versus Drain–Source Voltage*
* Data shown applies to each half of MRF175GU/GV.
MRF175GU MRF175GV
4
MOTOROLA RF DEVICE DATA