EB212 Datasheet, PDF (5/8 Pages) Motorola, Inc – Using Data Sheet Impedances for RF LDMOS Devices

Freescale Semiconductor, Inc.
EB212
f
MHz
2110
2140
2170
Z_source
Ω
2.45 + j2.08
2.39 + j2.51
2.16 + j3.14
Z_load
Ω
2.65 + j1.52
2.71 + j1.80
2.64 + j2.04
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
−
Output
Matching
Network
−
Z _source
+
Z _load
Figure 9. Data Sheet Representation of the
MRF21180 Push - Pull Device
! S11 (input) file
! Circuit
: MRF21180
! Author
: John Q. Designer
! Date
: 01/01/2003
! File
: mrf21180_zin.s1p
!
! File Format:
#
MHz Z
RE
IM
!
!
2110
2.45 - 2.08
2140
2.39 - 2.51
2170
2.16 - 3.14
!
! End of File
Figure 10. S2P File of Impedances to Be Used
at Input Block
S₁₁ < −30 dB
n:1
+
Balun
50 Ω
−
Matching
Network
MSTEP
b
a
Z*_{Data Sheet}
Matching
Network
b
Z (Device)
MSTEP
a
Figure 11. Generalized Schematic Used to Optimize Matching Network
PUSH–PULL DEVICES
The methods for taking impedance data on fixtures for
push - pull parts are similar to those for single - ended parts.
The representation for push- pull device impedances is shown
in Figure 9.
Push - pull device impedance data should be presented in
a data storage device, such as the one shown in Figure 10.
Note: The imaginary portion of the measured impedance
data has been conjugated from the data shown in Figure 9, the
same process as for the single - ended devices.
The methods for optimizing first- pass input and output side
matching networks for push–pull devices are the same as for
single - ended devices.
The circuit shown in Figure 11 is a generic matching circuit
that is used for an optimization of a first - pass input side
matching network. The balun shown in Figure 11 is an
idealized three - port device with a generic input/output
impedance ratio of n:1.
MOTOROLA SEMICONDUCTOR AP_FP_oL_rIC_MA_oTI_rO_eN_InIN_fF_oO_rR_mM_aA_tT_ioIO_nN_{On This Product,}
5
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