MTB55N06Z Datasheet, PDF (4/6 Pages) Motorola, Inc – TMOS POWER FET 55 AMPERES 60 VOLTS

MTB55N06Z
4000
VDS = 0 V VGS = 0 V
3200 ^Ciss
TJ = 25°C
2400
Crss
1600
Ciss
Coss
800
Crss
0
–10 –5.0
0
5.0
10
15
20
25
VGS VDS
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
12
48
QT
10
40
8.0
6.0 ^Q1
VGS
32
Q2
24
4.0
16
TJ = 25°C
2.0
Q3
ID = 30 A
8.0
VDS
0
0
0 4.0 8.0 12 16 20 24 28 32 36 40
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
1000
TJ = 25°C
ID = 30 A
VDD = 30 V
VGS = 10 V
tr
100
td(offt)f
td(on)
10
1.0
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
30
TJ = 25°C
VGS = 0 V
20
10
0
0.5 0.54 0.58 0.62 0.66 0.70 0.74 0.78 0.82 0.86 0.90 0.94
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
100 ms
10 ms
10
1.0 ms
10 ms
dc
1.0
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LMIT
0.1
0.1
1.0
10
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
500
ID = 30 A
400
300
200
100
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
4
Motorola TMOS Power MOSFET Transistor Device Data