MTB55N06Z Datasheet, PDF (2/6 Pages) Motorola, Inc – TMOS POWER FET 55 AMPERES 60 VOLTS

MTB55N06Z
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0)
V(BR)DSS
Vdc
60
—
—
—
53
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 2.0)
IDSS
IGSS
µAdc
—
—
1.0
—
—
10
—
—
100
nAdc
VGS(th)
Vdc
2.0
3.0
4.0
—
6.0
—
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 27.5 Adc)
(Cpk ≥ 2.0)
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 55 Adc)
(ID = 27.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 4.0 Vdc, ID = 27.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 30 Vdc, ID = 55 Adc,
VGS(on) = 10 Vdc,
RG = 9.1 Ω)
(VDS = 48 Vdc, ID = 55 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 55 Adc, VGS = 0 Vdc)
(IS = 55 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
mΩ
—
14
18
Vdc
—
0.825
1.2
—
0.74
1.0
12
15
—
Mhos
—
1390
1950
pF
—
520
730
—
119
238
—
27
54
ns
—
157
314
—
116
232
—
126
252
—
40
56
nC
—
7.0
—
—
18
—
—
15
—
Vdc
—
0.93
1.1
—
0.82
—
Reverse Recovery Time
Reverse Recovery Stored Charge
(IS = 55 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
—
57
—
ns
—
32
—
—
25
—
—
0.11
—
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from drain lead 0.25″ from package to center of die)
LD
nH
—
3.5
—
—
4.5
—
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
—
7.5
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data