MTB55N06Z Datasheet, PDF (3/6 Pages) Motorola, Inc – TMOS POWER FET 55 AMPERES 60 VOLTS

60
10 V
9.0 V
50
8.0 V
40
7.0 V
TJ = 25°C
6.0 V
30
20
5.0 V
10
VGS = 4.0 V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
60
VDS ≥ 10 V
50
MTB55N06Z
40
30
100°C
20
25°C
10
TJ = –55°C
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
24
VGS = 10 V
20
TJ = 100°C
16
25°C
12
–55°C
8.0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
15.0
TJ = 25°C
14.6
14.2
VGS = 10 V
13.8
15 V
13.4
13.0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.8
VGS = 10 V
1.6
ID = 15 A
1.4
1.2
1.0
0.8
0.6
–50 –25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1000
VGS = 0 V
100
125°C
100°C
10
1.0
TJ = 25°C
0.1
0.01
0
10
20
30
40
50
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3