MRF255 Datasheet, PDF (4/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FET

TYPICAL CHARACTERISTICS
15
1000
Coss
10
100
Ciss
5
VDS = 10 Vdc
VGS(th) = 2.3 Vdc
0
0
1
2
3
4
5
6
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain Current versus Gate Voltage
1.04
1.03
ID = 7 A
1.02
5A
1.01
1.00
3A
0.99
0.98
0.97
0.96
0.95 VDD = 12.5 Vdc
0.94
– 25
0
25 50
1A
0.5 A
75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 8. Gate–Source Voltage versus
Case Temperature
Crss
VGS = 0 Vdc
f = 1 MHz
10
0
5
10
15
20
25
30
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance versus Voltage
TC = 25°C
10
1
1
10
100
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 9. DC Safe Operating Area
Table 1. Series Equivalent Input and Output Impedance
VDD = 12.5 Vdc, IDQ = 400 mA, Pout = 55 W PEP
Optimized for Efficiency and IM Performance
f
MHz
Zin
Ohms
ZOL*
Ohms
54
6.50 + j7.96
1.27 + j1.54
ZOL* = Conjugate of the optimum load impedance into which the device
operates at a given power, voltage and frequency.
MRF255
4
MOTOROLA RF DEVICE DATA