MRF255 Datasheet, PDF (1/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field-Effect Transistor
N–Channel Enhancement–Mode
Designed for broadband commercial and industrial applications at frequencies
to 54 MHz. The high gain, broadband performance and linear characterization of
this device makes it ideal for large–signal, common source amplifier applications
in 12.5 Volt mobile and base station equipment.
• Guaranteed Performance at 54 MHz, 12.5 Volts
Output Power — 55 Watts PEP
Power Gain — 13 dB Min
Two–Tone IMD — –25 dBc Max
Efficiency — 40% Min, Two–Tone Test
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Aluminum Nitride Package Electrical Insulator
• Circuit Board Photomaster Available by Ordering Document
MRF255PHT/D from Motorola Literature Distribution.
Order this document
by MRF255/D
MRF255
55 W, 12.5 Vdc, 54 MHz
N–CHANNEL
BROADBAND
RF POWER FET
CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
Value
36
36
± 20
22
175
1.0
– 65 to +150
200
Max
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling
and packaging MOS devices should be observed.
©MMOotTorOolRa,OInLc.A19R95F DEVICE DATA
MRF255
1