MRF255 Datasheet, PDF (3/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FET

RF ^{N1 C1}
INPUT
VGG
+
C5
C6
L1
C2
C4
L2
C3
C7
DUT
R2
C9
R1
L5
C8
L3
C10
RFC1
+
C15 C16
+
VDD
C17
L4
C14 ^N2 _RF
OUTPUT
C11
C12
C1 — 470 pF, Chip Capacitor
C2, C3, C11, C12 — 20 – 200 pF, Trimmer, ARCO #464
C4 — 100 pF, Chip Capacitor
C5, C17 — 100 µF, 15 V, Electrolytic
C6 — 0.001 µF, Disc Ceramic
C7, C8, C9, C10 — 330 pF, Chip Capacitor
C14 — 1200 pF, ATC Chip Capacitor
C15 — 910 pF, 500 V, Dipped Mica
C16 — 47 µF, 16 V, Electrolytic
L1 — 8 Turns, #20 AWG, 0.126″ ID
L2 — 5 Turns, #18 AWG, 0.142″ ID
L3 — 3 Turns, #20 AWG, 0.102″ ID
L4 — 7 Turns, #24 AWG, 0.070″ ID
L5 — 6.5 Turns, #18 AWG, 0.230″ ID, 0.5″ Long
N1, N2 — Type N Flange Mount
RFC1 — Ferroxcube VK–200–19/4B
R1 — 39 kΩ, 1/4 W Carbon
R2 — 150 Ω, 1/4 W Carbon
Board — G–10 .060″
Figure 1. 54 MHz Linear RF Test Circuit Electrical Schematic
TYPICAL CHARACTERISTICS
– 10
100
90
– 20
IMD3
80
– 30
IMD5
– 40
– 50
– 60
0
VDD = 12.5 Vdc
IDQ = 400 mA
f1 = 54 MHz, f2 = 54.001 MHz
10 20 30 40 50 60 70 80 90
OUTPUT POWER (WATTS PEP)
Figure 2. IMD versus Output Power
70
60
50
40
30
VDD = 12.5 Vdc
20
IDQ = 400 mA
f1 = 54 MHz, f2 = 54.001 MHz
10
0
1
2
3
4
Pin, INPUT POWER (WATTS PEP)
Figure 3. Output Power versus Input Power
100
90
80
70
60
50
40
30
VDD = 12.5 Vdc
20
IDQ = 400 mA
f = 54 MHz
10
0
1
2
3
4
Pin, INPUT POWER (WATTS CW)
Figure 4. Output Power versus Input Power
100
90
Pin = 4 W
2W
80
1W
70
60
50
0.5 W
40
30
20
IDQ = 400 mA
f = 54 MHz
10
0
9
10
11
12
13
14
15 16
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 5. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF255
3