MRF184 Datasheet, PDF (4/9 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

TYPICAL CHARACTERISTICS
90
80
70
Pin = 2.5 W
60
50
40 VDD = 28 Vdc
30
IDQ = 400 mA
SINGLE TONE
20
10
1.0 W
0.5 W
0
800 820 840 860 880 900 920 940 960 980 1000
f, FREQUENCY (MHz)
Figure 8. Output Power versus Frequency
4
3.5
3
2.5
TYPICAL DEVICE SHOWN
2
1.5
1
VDS = 28 Vdc
0.5
0
0
1
2
3
4
5
6
VGS, GATE VOLTAGE (VOLTS)
Figure 9. Drain Current versus Gate Voltage
140
120
100
Ciss
80
60
40 _{VGS = 0 Vdc}
f = 1.0 MHz
20
0
0 5 10 15 20 25 30 35 40
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Coss
Crss
45 50
Figure 10. Capacitance versus Voltage
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
TJ = 150°C
TF = 70°C
0
0
5
10
15
20
25
30
35
VDS, DRAIN VOLTAGE (Vdc)
Figure 11. DC Safe Operating Area
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1 TJ = 175°C
0.5 TF = 70°C
0
0
5
10
15
20
25
30
35
VDS, DRAIN VOLTAGE (Vdc)
Figure 12. DC Safe Operating Area
16
65
15.5
η
60
15
55
Gpe
14.5
50
14
45
13.5
VDD = 28 Vdc
IDQ = 400 mA
VSWR
40
Pout = 60 W (CW)
13
35
880
900
920
940
960
980
f, FREQUENCY (MHz)
Figure 13. Performance in Broadband Circuit
MRF184 MRF184S
4
MOTOROLA RF DEVICE DATA