MRF184 Datasheet, PDF (1/9 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF184/D
The RF MOSFET Line
RF POWER Field-Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
makes them ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
• Guaranteed Performance @ 945 MHz, 28 Volts
Output Power = 60 Watts
Power Gain = 11.5 dB
Efficiency = 53%
• Characterized with Series Equivalent Large–Signal
D
Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 30:1 VSWR @ 28 Vdc,
945 MHz
G
S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 70°C
Derate above 70°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 1 mAdc)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0 V)
V(BR)DSS
IDSS
IGSS
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
Min
65
–
–
MRF184
MRF184S
60 W, 1.0 GHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–01, STYLE 1
(MRF184)
CASE 360C–03, STYLE 1
(MRF184S)
Value
65
± 20
7
118
0.9
– 65 to +150
200
Max
1.1
Typ
Max
–
–
–
1
–
1
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Vdc
µAdc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF184 MRF184S
1