MRF184 Datasheet, PDF (3/9 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

TYPICAL CHARACTERISTICS
– 20
3rd ORDER
– 30
– 40
5th
– 50
7th
– 60
–70
– 80
0
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
IDQ = 400 mA
10
20
30
40
50
60
70
Pout, OUTPUT POWER (WATTS PEP)
Figure 2. Intermodulation Distortion versus
Output Power
18
IDQ = 600 mA
16
400 mA
250 mA
14
100 mA
VDD = 28 Vdc
f = 945 MHz
12
1
10
100
Pout, OUTPUT POWER (WATTS)
Figure 4. Power Gain versus Output Power
–15
– 25
IDQ = 100 mA
– 35
– 45
– 55
0.1
250 mA
600 mA
400 mA
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
1
10
100
Pout, OUTPUT POWER (WATTS PEP)
Figure 3. Intermodulation Distortion versus
Output Power
80
16
70
Gpe
60
50
40
15
30
Pout
20
VDS = 28 Vdc
10
IDQ = 400 mA
f = 945 MHz
0
14
0
0.5
1
1.5
2
2.5
3
Pin, INPUT POWER (WATTS)
Figure 5. Output Power versus Input Power
100
90
Pin = 4.0 W
80
70
2.0 W
60
50
40
1.0 W
30
20
10
IDQ = 400 mA
f = 945 MHz
0
12 14 16 18 20 22 24 26 28 30 32
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
80
70
60
50
TYPICAL DEVICE SHOWN
40
30
20
10
0
0 0.5
VDS = 28 Vdc
Pin = 2.0 W
f = 945 MHz
1 1.5 2 2.5 3 3.5 4 4.5 5
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate Voltage
MOTOROLA RF DEVICE DATA
MRF184 MRF184S
3