MRF182 Datasheet, PDF (4/8 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

TYPICAL CHARACTERISTICS
40
VDS = 28 Vdc
35 IDQ = 50 mA
f = 1 GHz
30
25
20
15
10
5
0
0
0.5
1
1.5
2
Pin, INPUT POWER (WATTS)
16
14
12
10
8
6
4
VDS = 28 Vdc
2 IDQ = 50 mA
f = 1 GHz
0
2.5
0
5
10 15 20 25 30 35 40
Pout, OUTPUT POWER (WATTS)
Figure 2. Output Power versus
Input Power at 1 GHz
Figure 3. Power Gain versus
Output Power at 1 GHz
60
VDS = 28 Vdc
50
IDQ = 50 mA
f = 1 GHz
40
30
20
10
0
0
5
10 15 20 25 30 35 40
Pout, OUTPUT POWER (WATTS)
Figure 4. Drain Efficiency versus
Output Power at 1 GHz
30
f = 1 GHz
IDQ = 50 mA
25
20
Pin = 1.23 W
15
0.75 W
10
0.35 W
5
0
12 14 16 18 20 22 24 26 28
VDS, SUPPLY VOLTAGE (VOLTS)
Figure 5. Output Power versus Supply Voltage
20
18
VDS = 13.5 Vdc
IDQ = 50 mA
16 f = 1 GHz
14
12
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
Pin, INPUT POWER (WATTS)
100
10
1
3
0
Ciss
Coss
Crss
5
10
15
20
25
30
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Input Power
Figure 7. Capacitance versus Drain
Source Voltage
MRF182
4
MOTOROLA RF DEVICE DATA