MRF182 Datasheet, PDF (2/8 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 100 µA)
Gate Quiescent Voltage
(VDS = 28 V, ID = 50 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
Forward Transconductance
(VDS = 10 V, ID = 3 A)
VGS(th)
2
3
4
Vdc
VGS(Q)
3
4
5
Vdc
VDS(on)
–
0.9
1.2
Vdc
gfs
1.6
1.8
–
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss
–
56
–
pF
Coss
–
28
–
pF
Crss
–
2.5
–
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 945 MHz)
Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 945 MHz)
Load Mismatch
(VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 945 MHz,
Load VSWR 5:1 at All Phase Angles)
Gps
11
14
–
dB
η
50
60
–
%
Ψ
No Degradation in Output Power
Series Equivalent Input Impedance
(VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 960 MHz)
Series Equivalent Output Impedance
(VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 960 MHz)
Zin
Zout
–
0.81 + j1.6
–
–
2.15 – j1.7
–
ohms
ohms
MRF182
2
MOTOROLA RF DEVICE DATA