MRF182 Datasheet, PDF (1/8 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement–Mode Lateral
MOSFETs
• High Gain, Rugged Device
• Broadband Performance from HF to 1 GHz
• Bottom Side Source Eliminates DC Isolators, Reducing Common
Mode Inductances
D
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by MRF182/D
MRF182
MRF182S
30 W, 1.0 GHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–01, STYLE 1
G
(MRF182)
S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 70°C
Derate above 70°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 1.0 mAdc)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
R_θJC
Min
65
–
–
CASE 360C–03, STYLE 1
(MRF182S)
Value
65
± 20
74
0.57
– 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Max
Unit
1.75
°C/W
Typ
Max
Unit
–
–
Vdc
–
1
µAdc
–
1
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF182
1