MRF174 Datasheet, PDF (4/10 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

160
140
f = 150 MHz
Pin = CONSTANT
120
IDQ = 100 mA
VDD = 28 V
100
80
60
40
20
0
–14
TYPICAL DEVICE SHOWN, VGS(th) = 3 V
–12 –10 – 8 – 6 – 4 – 2 0 2 4 6
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 8. Output Power versus Gate Voltage
5
4
VDS = 10 V
3
2
TYPICAL DEVICE SHOWN, VGS(th) = 3 V
1
0
1
2
3
4
5
6
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 9. Drain Current versus Gate Voltage
(Transfer Characteristics)
1.2
1.1
1
0.9
0.8
– 25
1000
900
VDD = 28 V
800
700
VGS = 0 V
f = 1 MHz
600
ID = 4 A
3A
500
2A
400
300
100 mA
200
100
0
0
25
50
75 100 125 150 175
0
TC, CASE TEMPERATURE (°C)
Coss
Ciss
Crss
4
8
12
16
20
24
28
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 10. Gate–Source Voltage versus
Case Temperature
Figure 11. Capacitance versus Drain Voltage
20
10
6
4
2
TC = 25°C
1
0.6
0.4
0.2
1
2
4 6 10
20
40 60 100
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 12. DC Safe Operating Area
MRF174
4
MOTOROLA RF DEVICE DATA