MRF174 Datasheet, PDF (2/10 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
Gate–Source Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
Forward Transconductance (VDS = 10 V, ID = 3.0 A)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
FUNCTIONAL CHARACTERISTICS (Figure 1)
Noise Figure
NF
(VDD = 28 Vdc, ID = 2.0 A, f = 150 MHz)
Common Source Power Gain
Gps
(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA)
Drain Efficiency
η
(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA)
Electrical Ruggedness
ψ
(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA,
VSWR 30:1 at all Phase Angles)
Min
Typ
Max
Unit
65
—
—
Vdc
—
—
10
mAdc
—
—
1.0
µAdc
1.0
3.0
1.75
2.5
6.0
Vdc
—
mhos
—
175
—
pF
—
190
—
pF
—
40
—
pF
—
3.0
—
dB
9.0
11.8
—
dB
50
60
—
%
No Degradation in Output Power
R2
BIAS
ADJUST
R3
+
C9
C10
–
D1
RF INPUT
C1
C
3 _L1
C2 ^C4
R4
L2
C5
C11
RFC1
DUT
L4
C12
R1
L3
C6
C13
C14
C8
C7
+
VDD = 28 V
–
RF OUTPUT
MRF174
2
C1 — 15 pF Unelco
C2 — Arco 462, 5.0 – 80 pF
C3 — 100 pF Unelco
C4 — 25 pF Unelco
C6 — 40 pF Unelco
C7 — Arco 461, 2.7 – 30 pF
C5, C8 — Arco 463, 9.0 – 180 pF
C9, C11, C14 — 0.1 µF Erie Redcap
C10 — 50 µF, 50 V
C12, C13 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener
L1 — #16 AWG, 1–1/4 Turns, 0.213″ ID
L2 — #16 AWG, Hairpin
0.25″
L3 — #14 AWG, Hairpin
0.062″
0.47″
0.2″
L4 — 10 Turns #16 AWG Enameled Wire on R1
RFC1 — 18 Turns #16 AWG Enameled Wire, 0.3″ ID
R1 — 10 Ω, 2.0 W
R2 — 1.8 kΩ, 1/2 W
R3 — 10 kΩ, 10 Turn Bourns
R4 — 10 kΩ, 1/4 W
Figure 1. 150 MHz Test Circuit
MOTOROLA RF DEVICE DATA