MRF174 Datasheet, PDF (1/10 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode
. . . designed primarily for wideband large–signal output and driver stages up to
200 MHz frequency range.
• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 125 Watts
Minimum Gain = 9.0 dB
Efficiency = 50% (Min)
• Excellent Thermal Stability, Ideally Suited For Class A
Operation
• Facilitates Manual Gain Control, ALC and Modulation
Techniques
• 100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
• Low Noise Figure — 3.0 dB Typ at 2.0 A, 150 MHz
D
Order this document
by MRF174/D
MRF174
125 W, to 200 MHz
N–CHANNEL MOS
BROADBAND RF POWER
FET
G
S
CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 MΩ)
VDGR
65
Vdc
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VGS
± 40
Vdc
ID
13
Adc
PD
270
Watts
1.54
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
°C
TJ
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R_θJC
0.65
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF174
1