MRF166W Datasheet, PDF (4/6 Pages) Motorola, Inc – TMOS BROADBAND RF POWER FET

50
f = 175 MHz
45
40
400 MHz
35
500 MHz
30
25
20
15
10
5
VDD = 28 Vdc
IDQ = 200 mA
0
0
1
2
3
4
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
45
f = 400 MHz
40 _{IDQ = 100 mA}
35
Pin = 3.0 W
2.0 W
30
25
1.0 W
20
15
0.5 W
10
5
0
12 14 16 18 20 22 24 26 28
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. Output Power versus Voltage
40
100
VDD = 28 Vdc
35 _{IDQ = 100 mA}
90
80
30
TYPICAL DEVICE SHOWN,
70
25 _{VGS(th) = 3.0 V}
60
20
50
15
f = 400 MHz
40
30
10
20
5
10
0
0
–10 – 9 – 8 –7 – 6 – 5 – 4 – 3 – 2 –1 0 1 2 3
0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 4. Output Power versus Gate Voltage
VGS = 0 V
f = 1.0 MHz
Coss
Ciss
Crss
4
8
12
16
20
24
28
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 5. Capacitance versus Voltage
MRF166W
4
MOTOROLA RF DEVICE DATA