MRF166W Datasheet, PDF (1/6 Pages) Motorola, Inc – TMOS BROADBAND RF POWER FET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages to
500 MHz.
• Push–Pull Configuration Reduces Even Numbered Harmonics
• Typical Performance at 400 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 13 dB
Efficiency = 50%
• Typical Performance at 175 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 17 dB
Efficiency = 60%
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
• Low Crss — 4.5 pF @ VDS = 28 Volts
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF166W/D
MRF166W
40 W, 500 MHz
TMOS BROADBAND
RF POWER FET
CASE 412–01, Style 1
1
3
5
4
FLANGE
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Gate Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGR
VGS
ID
PD
65
Vdc
65
Vdc
± 40
Adc
8.0
ADC
175
Watts
1.0
°C/W
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
°C
TJ
200
°C
Thermal Resistance — Junction to Case
R_θJC
1.0
°C/W
NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF166W
1