MRF140 Datasheet, PDF (4/6 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET

150
Zin
50
150
30
30
7.0
ZOL*
f = 2.0 MHz
Zo = 10 Ohms
7.0
VDD = 28 V
IDQ = 250 mA
Pout = 150 W PEP
f = 2.0 MHz
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
NOTE: Gate Shunted by 25 Ohms.
Figure 7. Series Equivalent Impedance
BIAS
0 – 12 V
RF INPUT
R1
C4
C1
+
C5
L1
DUT
RFC1
C2
C3
R2
D1
RFC1
+ 28 V
L4
C10
+
– ^C11
L3
C6
L2
C7
C9
RF
OUTPUT
C8
C1, C2, C8 — Arco 463 or equivalent
C3 — 25 pF, Unelco
C4 — 0.1 µF, Ceramic
C5 — 1.0 µF, 15 WV Tantalum
C6 — 15 pF, Unelco J101
C7 — 25 pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05 µF, Ceramic
C11 — 15 µF, 35 WV Electrolytic
L1 — 3/4″, #18 AWG into Hairpin
L2 — Printed Line, 0.200″ x 0.500″
L3 — 7/8″, #16 AWG into Hairpin
L4 — 2 Turns, #16 AWG, 5/16 ID
RFC1 — 5.6 µH, Molded Choke
RFC2 — VK200–4B
R1, R2 — 150 Ω, 1.0 W Carbon
Figure 8. 150 MHz Test Circuit (Class AB)
MRF140
4
MOTOROLA RF DEVICE DATA