MRF140 Datasheet, PDF (3/6 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET

25
20
15
10
VDD = 28 V
IDQ = 250mA
5 Pout = 150 W (PEP)
0
2
5
10
20
50
100
200
f, FREQUENCY (MHz)
Figure 2. Power Gain versus Frequency
200
160
120
80
40
0
0
10
20
30
VDD = 28 V, IDQ = 250 mA
200
160
120
80
40
00
1
2
3
4
5
6
Pin, INPUT POWER (WATTS)
Figure 3. Output Power versus Input Power
– 25
– 30
– 35
– 40
– 45
– 30
– 35
– 40
– 45
– 50
0
d3
d5
VDD = 28 V, IDQ = 250 mA,
TONE SEPARATION = 1 kHz
d3
d5
20 40 60 80 100 120 140 160
Pout, OUTPUT POWER (WATTS PEP)
Figure 4. IMD versus Pout
1000
800
600
400
200
0
0
VDS = 20 V
10 V
5
10
15
20
ID, DRAIN CURRENT (AMPS)
Figure 5. Common Source Unity Gain
Frequency versus Drain Current
10
8
VDS = 10 V
gfs = 6 mhos
6
4
2
0
0
2
4
6
8
10
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 6. Gate Voltage versus Drain Current
MOTOROLA RF DEVICE DATA
MRF140
3