MRF140 Datasheet, PDF (2/6 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0)
IDSS
—
—
5.0
mAdc
Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0)
IGSS
—
—
1.0
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
5.0
Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 10 Adc)
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
VDS(on)
0.1
0.9
1.5
Vdc
gfs
4.0
7.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
450
—
pF
Coss
—
400
—
pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
75
—
pF
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain
(30 MHz)
Gps
—
15
—
dB
(VDD = 28 V, Pout = 150 W (PEP), IDQ = 250 mA) (150 MHz)
—
6.0
—
Drain Efficiency
(VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 6.5 A)
η
—
40
—
%
Intermodulation Distortion (1)
(VDD = 28 V, Pout = 150 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 250 mA)
dB
IMD(d3)
—
– 30
—
IMD(d11)
—
– 60
—
Load Mismatch
ψ
(VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
No Degradation in Output Power
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
BIAS ⁺
0 – 12 V–
RF INPUT
C11 R4 C5
C6 C7
L1
C8
L2
R1
C4
T2
DUT
R3
T1
C2
C3
C12
R2
+
C9
C10
–
+
28 V
–
RF
OUTPUT
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or
Monolythic with Short Leads
C3 — Arco 469
C4 — 820 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10 µF/100 V Electrolytic
C11 — 1 µF, 50 V, Tantalum
C12 — 330 pF, Dipped Mica (Short leads)
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 1.0 Ω/1.0 W Carbon or Parallel Two 2 Ω, 1/2 W Resistors
R4 — 1 kΩ/1/2 W Carbon
T1 — 16:1 Broadband Transformer
T2 — 1:25 Broadband Transformer
Figure 1. 30 MHz Test Circuit (Class AB)
MRF140
2
MOTOROLA RF DEVICE DATA