MRF137 Datasheet, PDF (4/10 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

50
40
Pin = 8 W
30
5W
20
2W
10
IDQ = 25 mA
f = 400 MHz
0
12
16
20
24
28
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
30
VDD = 28 V
25 _{IDQ = 25 mA}
Pin = CONSTANT
20
TYPICAL DEVICE SHOWN,
15 ^{VGS(th) = 3 V}
10
400 MHz
150 MHz
5
0
–9 –8
–6
–4
–2
0 123
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 9. Output Power versus Gate Voltage
3
TYPICAL DEVICE SHOWN,
VGS(th) = 3 V
2
VDS = 10 V
1
0
1
2
3
4
5
6
7
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 10. Drain Current versus Gate Voltage
(Transfer Characteristics)
1.02
ID = 1.25 A
1A
1
750 mA
0.98
0.96
0.94
VDS = 28 V
25 mA
500 mA
200 mA
0.92
– 25
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 11. Gate Source Voltage versus
Case Temperature
200
180
160
140
120
100
80
60
40
20
0
0
Coss
Ciss
Crss
10
VGS = 0 V
5
f = 1 MHz
2
1
0.5
4
8
12
16
20
24
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 12. Capacitance versus
Drain–Source Voltage
0.1
28
1
TC = 25°C
2
5
10
20
60 100
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 13. DC Safe Operating Area
MRF137
4
MOTOROLA RF DEVICE DATA