MRF137 Datasheet, PDF (1/10 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
. . . designed for wideband large–signal output and driver stages up to
400 MHz range.
• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 30 Watts
Minimum Gain = 13 dB
Efficiency — 60% (Typical)
• Small–Signal and Large–Signal Characterization
• Typical Performance at 400 MHz, 28 Vdc, 30 W
Output = 7.7 dB Gain
• 100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
• Low Noise Figure — 1.5 dB (Typ) at 1.0 A, 150 MHz
• Excellent Thermal Stability, Ideally Suited For Class A
Operation
D
• Facilitates Manual Gain Control, ALC and Modulation
Techniques
Order this document
by MRF137/D
MRF137
30 W, to 400 MHz
N–CHANNEL MOS
BROADBAND RF POWER
FET
G
MAXIMUM RATINGS
CASE 211–07, STYLE 2
S
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 MΩ)
VDGR
65
Vdc
Gate–Source Voltage
VGS
± 40
Vdc
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
ID
5.0
Adc
PD
100
Watts
0.571
W/°C
Storage Temperature Range
Operating Junction Temperature
Tstg
– 65 to +150
°C
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R_θJC
1.75
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF137
1