MRF137 Datasheet, PDF (2/10 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 10 mA)
V(BR)DSS
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
Gate–Source Leakage Current (VGS = 20 V, VDS = 0)
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 25 mA)
Forward Transconductance (VDS = 10 V, ID = 500 mA)
VGS(th)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
Crss
FUNCTIONAL CHARACTERISTICS
Noise Figure
NF
(VDS = 28 Vdc, ID = 1.0 A, f = 150 MHz)
Common Source Power Gain
Gps
(VDD = 28 Vdc, Pout = 30 W,
f = 150 MHz (Figure 1)
IDQ = 25 mA)
f = 400 MHz (Figure 14)
Drain Efficiency (Figure 1)
η
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 25 mA)
Electrical Ruggedness (Figure 1)
ψ
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 25 mA,
VSWR 30:1 at All Phase Angles)
Min
Typ
Max
Unit
65
—
—
Vdc
—
—
4.0
mAdc
—
—
1.0
µAdc
1.0
3.0
6.0
Vdc
500
750
—
mmhos
—
48
—
pF
—
54
—
pF
—
11
—
pF
—
1.5
—
dB
dB
13
16
—
—
7.7
—
50
60
—
%
No Degradation in Output Power
BIAS
ADJUST
R3
R2
C6
R4
+
D1
C7
C8
–
RFC1
RFC2
C9
C10
+ VDD = 28 V
RF
C1
INPUT
L1
C2
R1
DUT
L2
L3
C3
C5
C4
RF
OUTPUT
C1 — Arco 403, 3.0– 35 pF, or equivalent
C2 — Arco 406, 15– 115 pF, or equivalent
C3 — 56 pF Mini–Unelco, or equivalent
C4 — Arco 404, 8.0– 60 pF, or equivalent
C5 — 680 pF, 100 Mils Chip
C6 — 0.01 µF, 100 V, Disc Ceramic
C7 — 100 µF, 40 V
C8 — 0.1 µF, 50 V, Disc Ceramic
C9, C10 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener
L1 — 2 Turns, 0.29″ ID, #18 AWG Enamel, Closewound
L2 — 1–1/4 Turns, 0.2″ ID, #18 AWG Enamel, Closewound
L3 — 2 Turns, 0.2″ ID, #18 AWG Enamel, Closewound
RFC1 — 20 Turns, 0.30″ ID, #20 AWG Enamel, Closewound
RFC2 — Ferroxcube VK–200 — 19/4B
R1 — 10 kΩ, 1/2 W Thin Film
R2 — 10 kΩ, 1/4 W
R3 — 10 Turns, 10 kΩ
R4 — 1.8 kΩ, 1/2 W
Board — G10, 62 Mils
Figure 1. 150 MHz Test Circuit
MRF137
2
MOTOROLA RF DEVICE DATA