MMBR951 Datasheet, PDF (4/13 Pages) Motorola, Inc – NPN Silicon Low Noise, High-Frequency Transistors

10
5
f = 1 MHz
2
1
0.5
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
MMBR951LT1
200
VCE = 8 V
100
50
0.2
20
0.1
1
2
5
10
20
10
50
100
1
VCB, REVERSE VOLTAGE (V)
Figure 1. Collector–Base Capacitance
versus Voltage
23 5
10
20
50
100
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain versus
Collector Current
12
10
8
6
4
2
VCE = 8 V
0
1
23
5 7 10
20 30
IC, COLLECTOR CURRENT (mA)
70 100
Figure 3. Gain Bandwidth Product versus
Collector Current
16
14
12
10
MMBR951LT1
8
6
VCE = 8 V
f = 1 GHz
4
1
23
5 7 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Insertion Gain versus Collector Current
MMBR951 MRF957
4
MOTOROLA RF DEVICE DATA
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