MMBR951 Datasheet, PDF (3/13 Pages) Motorola, Inc – NPN Silicon Low Noise, High-Frequency Transistors

Freescale Semiconductor, Inc.
PERFORMANCE CHARACTERISTICS
Conditions
MMBR951LT1
MRF957T1
Symbol
Unit
Min Typ Max Min Typ Max
Insertion Gain
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
|S21|2
dB
—
12.5
—
—
13.3
—
—
7.0
—
—
—
—
—
—
—
—
10.1
—
Maximum Unilateral Gain (1)
(VCE = 8.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 8.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
GU _max
dB
—
14
—
—
14
—
—
8.0
—
—
—
—
—
—
—
—
10.8
—
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
NFMIN
dB
—
1.3
—
—
1.5
—
—
2.1
—
—
—
—
—
—
—
—
2.0
—
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
GNF
dB
—
13
—
—
11.8
—
—
7.5
—
—
—
—
—
—
—
—
9.0
—
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NF50 _Ω
—
1.9
2.8
—
1.9
2.8
dB
NOTE:
1. Maximum
Unilateral
Gain
is
GUmax
=
|S21|2
(1 – |S11|2)(1 – |S22|2)
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MMBR951 MRF957
3