MMBR951 Datasheet, PDF (2/13 Pages) Motorola, Inc – NPN Silicon Low Noise, High-Frequency Transistors

Freescale Semiconductor, Inc.
MAXIMUM RATINGS0
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C
Derate linearly above Tcase = 75°C @
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
DEVICE MARKING
MMBR951LT1 = 7Z
MRF957T1 = B
Symbol
VCEO
VCBO
VEBO
PD(max)
IC
TJmax
Tstg
R_θJC
MMBR951LT1
10
20
1.5
0.322
4.29
100
150
– 55 to +150
233
MRF957T1
10
20
15
0.227
3.03
100
150
– 55 to +150
330
Unit
Vdc
Vdc
Vdc
Watts
mW/°C
mA
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (3)
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
V(BR)CEO 10
13
—
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO 20
25
—
Vdc
Emitter Cutoff Current
(VEB = 1.0 V, IC = 0)
IEBO
—
—
0.1 µAdc
Collector Cutoff Current
(VCB = 10 V, IE = 0)
ICBO
—
—
0.1 µAdc
ON CHARACTERISTICS (3)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA)
hFE
—
50 — 200
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Ccb
— 0.45 1.0
pF
Current Gain — Bandwidth Product
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
MMBR951LT1
MRF957T1
fT
GHz
— 8.0 —
— 9.0 —
NOTES:
1. To calculate the junction temperature use TJ = (PD x R_θJA) + TCASE. Case temperature measured on collector lead immediately adjacent
to body of package.
2. IC — Continuous (MTBF ≈ 10 years).
3. Pulse width ≤ 300 µs, duty cycle ≤ 2% pulsed.
MMBR951 MRF957
2
MOTOROLA RF DEVICE DATA
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